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Characteristics of synthesized diamond films by using CACVD techniques at high temperatures
Author(s)
Pongsai, S. B.
Date Issued
January 1, 2010
Type
Conference Paper
Abstract
This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (1010 Ω), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 MΩ to 2.42 MΩ. The result obtained from the hydrogen termination showed that the resistance has decreased by 105-106 Ω (at 30° C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films. © (2010) Trans Tech Publications.
Citation
Key Engineering Materials, 421-422, 131-134, 2010