Loading...
Single electron-hole pair generation using dark-bright solitons conversion control
Author(s)
Jomtarak, R.
Teeka, C.
Yupapin, P. P.
Ali, J.
Date Issued
December 1, 2010
Type
Conference Paper
Abstract
Recently, the electron-hole pair generated in 1.06-μm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 μm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 μm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7]. ©2010 IEEE.
Citation
2010 International Conference on Enabling Science and Nanotechnology Escinano 2010 Proceedings, 2010