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Nonlinear switching in silicon-based ring resonators
Author(s)
Kusalajeerung, Channarong
Chiangga, Surasak
Pitukwongsaporn, Santad
Yupapin, Preecha P.
Date Issued
February 1, 2011
Type
Article
Abstract
In this paper, we analyzed and investigated the nonlinear switching characteristics of an optical device using a double-coupler silicon ring resonator in the presence of the linear losses, the Kerr nonlinearity, two-photon absorption, thermo-optic effects, free-carrier-induced absorption, and dispersion. Results obtained have shown that the general features of the nonlinear switching of the throughput and drop port signals are similar to a single-couple ring and nonlinear Fabry-Perot resonators, respectively. The interesting results of the double-coupler silicon ring resonator are the low switching power conditions and the linear amplification gain. The various applications can be provided by controlling the input-output of silicon-based resonators, for instance, by controlling the coupling ratio, free-carrier lifetime, and input wavelength, in which the multiple applications for optical switches, logic gates, and memories can be provided. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
Citation
Optical Engineering, 50(2), 2011