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An in-line contact configuration for the Hall sensor device

Author(s)
Wipatawit, Praphaphan
Wangtong, Salisa
Trithaveesak, Opas
Hruanun, Charndet
Poyai, Amporn
Date Issued
September 22, 2011
Type
Conference Paper
DOI
10.1109/IWASI.2011.6004707
Abstract
This paper introduces a Hall sensor device with an inline contact configuration geometry, similar to the Vertical Hall Device (VHD) but unlike the latter, is sensitive to magnetic fields perpendicular to the surface of the sensor. It is fabricated using a standard 0.8μm CMOS process provided by Thai Microelectronic Center (TMEC). Measurements made of the components of magnetic fields in 3-axes (x, y and z) have shown strong responses to fields perpendicular to the x plane of the sensor, but completely insensitivity to in-plane magnetic fields, y and z. The best current-related sensitivity reaches a maximum of 20μV/AT at an applied current of 1mA. Hall voltages are linear up to 500mT. Angular measurements performed show good angular selectivity. In-line contact configuration devices will be good potential candidates as 3D magnetic vector sensors. © 2011 IEEE.
Citation
Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces Iwasi 2011, 153-156, 2011
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