Low voltage CMOS fully differential active inductor and its application to RF bandpass amplifier design

Thanachayanont, A.

Low voltage CMOS fully differential active inductor and its application to RF bandpass amplifier design

Author(s)

Thanachayanont, A.

Date Issued

January 1, 2001

Type

Conference Paper

Abstract

This paper presents the design of a 1.5-V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a p-channel input cascode transconductor and the newly proposed low-voltage fully-differential active inductor as an active tuned load. HSPICE simulation of the bandpass amplifier operating at a centre frequency of 1 GHz and a quality factor of 50 illustrates that a voltage gain of 50 dB and a noise figure of 4.2 dB can be achieved with a power dissipation of 46 mW from a single 1.5 V power supply voltage.

Citation

International Symposium on VLSI Technology Systems and Applications Proceedings, 125-128, 2001