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Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions
Author(s)
Niemcharoen, S.
Kobayashi, K.
Kimura, M.
Sato, K.
Date Issued
October 1, 2001
Type
Article
Abstract
Bias dependence of the photocurrent in planar metal-semiconductor-metal systems under dc and ac optical illumination conditions has been examined experimentally. Making use of molybdenum-silicon-molybdenum structures with a long undepleted neutral region, we measured their dc and low frequency (100 Hz to 100 kHz) photoresponse properties. It was confirmed that, in addition to opto-electronic conversion function, these structures showed an appreciable voltage controllability of the photocurrent in the device. © 2001 Elsevier Science Ltd. All rights reserved.
Citation
Solid State Electronics, 45(10), 1815-1819, 2001