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New method for improving the electrical characteristics of P-N junction diode
Author(s)
Srithanachai, Itsara
Ueamanapong, Surada
Poyai, Amporn
Niemcharoen, Surasak
Date Issued
January 1, 2012
Type
Conference Paper
Abstract
This paper investigates the effect of soft X-ray irradiation various energy and times on PN junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.
Citation
Advanced Materials Research, 378-379, 606-609, 2012