Repository logo
Communities & Collections
Research Outputs
Fundings & Projects
People
Statistics
New user? Click here to register.Have you forgotten your password?
  1. Home
  2. KMITL
  3. Publication
  4. Improving forward current characteristics of diode by X-ray irradiation
Loading...
Thumbnail Image

Improving forward current characteristics of diode by X-ray irradiation

Author(s)
Niemcharoen, Surasak
Srithanachai, Itsara
Ueamanapong, Surada
Poyai, Amporn
Date Issued
January 25, 2012
Type
Conference Paper
DOI
10.4028/www.scientific.net/AMR.433-440.6713
Abstract
These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second. © (2012) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 433-440, 6713-6716, 2012
Subjects

Forward current

Series resistance

X-ray irradiation

Metrics
Get Involved!
  • Source Code
  • Documentation
  • Slack Channel
Make it your own

DSpace-CRIS can be extensively configured to meet your needs. Decide which information need to be collected and available with fine-grained security. Start updating the theme to match your Institution's web identity.

Need professional help?

The original creators of DSpace-CRIS at 4Science can take your project to the next level, get in touch!

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Accessibility settings
  • Privacy policy
  • End User Agreement
  • Send Feedback