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Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
Author(s)
Date Issued
January 1, 2013
Type
Conference Paper
Abstract
n-Type β-FeSi2 thin films were epitaxially and non-epitaxially grown on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) at a substrate temperature of 600°C. Whereas the n-type epitaxial β-FeSi2/p-type Si heterojunctions exhibited a typical rectifying behavior with a rectification ratio of more than two orders of magnitude at bias voltages between ±1 V, the heterojunctions comprising non-epitaxial β-FeSi2 films rarely exhibited rectifying action. The epitaxial growth of β-FeSi2 is an significant factor for forming the heterojunction diodes. © The Electrochemical Society.
Citation
Ecs Transactions, 50(6), 157-162, 2013