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Effect of junction shape on diode properties
Author(s)
Chalamnongnoot, Akkalak
Itthikusumarn, Wiwat
Titiroongruang, Wisut
Date Issued
August 30, 2013
Type
Conference Paper
Abstract
Reverse leakage current (IR) is a problem that degrade electrical characteristics and power diode effective. This paper presents the parameter extraction and analysis reverse leakage current of N-type silicon power-diodes with different geometries. All power diode were tested in 3perimeter and effective areas as follows: 0.58 cm, 0.98 cm, 1.72 cm and 0.022 cm2, 0.062 cm2 0.192 cm2, respectively. We found the reverse leakage current increase with the larger junction perimeterto effective arearatio(P/A)that meaning the inverse leakage current increase with perimeter of the junction. © (2013) Trans Tech Publications Switzerland.
Citation
Advanced Materials Research, 717, 125-128, 2013