Loading...
An improvement of the breakdown voltage characteristics of NPT-TIGBT by using a P-buried layer
Author(s)
Kerdpardist, Amonrat
Saenlamool, Montree
Chaowicharat, Ekalak
Poyai, Amporn
Titiroongruang, Wisut
Date Issued
August 30, 2013
Type
Conference Paper
Abstract
In this paper, we introduced a P-buried (Pb) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The Pb layer, with carrier concentration of 5 ×1016 cm-3, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 717, 158-163, 2013