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Plasmon-mediated energy relaxation in graphene
Author(s)
Date Issued
December 28, 2015
Type
Article
Abstract
Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.
Citation
Applied Physics Letters, 107(26), 2015