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Characterization of n-Type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-Type silicon heterojunctions at low temperatures
Author(s)
Baba, Ryuji
Kishimoto, Hirokazu
Sittimart, Phongsaphak
Hanada, Takanori
Hanada, Kenji
Zkria, Abdelrahman
Shaban, Mahmoud
Yoshitake, Tsuyoshi
Date Issued
January 1, 2016
Type
Article
Abstract
N-Type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type Si heterojunction photodiodes were successfully fabricated using pulsed laser deposition and coaxial arc plasma deposition. Their current-voltage (I-V) curves were measured at low temperatures ranging from 300 K to 60 K. The possible carrier conduction mechanisms were determined by analyzing the dark I-V curves. The NIR photodetections were evaluated using a 1.31 μm laser. The dominant conduction mechanisms through the heterojunctions from 300 K to 200 K and 180 K to 60 K were recombination and trapassisted multi-step tunneling processes, respectively. At 60 K, the difference in ratio between photocurrent and dark current was three orders of magnitude, with detectivity of 1.10×1011 cm Hz1/2/W at zero bias voltage, which was comparable to the existing values of commercial NIR photodiodes at the same temperature.
Citation
Journal of Nanoelectronics and Optoelectronics, 11(5), 579-584, 2016