CMOS RF amplifier with tuneable band-selection and image rejection

Thanachayanont, A.; Sae-Ngow, S.

doi:10.1109/VTSA.2003.1252609

CMOS RF amplifier with tuneable band-selection and image rejection

Author(s)

Thanachayanont, A.

Sae-Ngow, S.

Date Issued

January 1, 2003

Type

Conference Paper

DOI

10.1109/VTSA.2003.1252609

Abstract

This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, lownojse amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the sourcedegeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-u.m CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.

Citation

International Symposium on VLSI Technology Systems and Applications Proceedings, 2003-January, 284-287, 2003