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  4. "freeing" Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing
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"freeing" Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing

Author(s)
Ramamoorthy, H.
Somphonsane, R.
Radice, J.
He, G.
Kwan, C. P.
Bird, J. P.
Date Issued
January 13, 2016
Type
Article
DOI
10.1021/acs.nanolett.5b04003
Abstract
Rapid (nanosecond-scale) electrical pulsing is used to study drift-velocity saturation in graphene field-effect devices. In these experiments, high-field pulses are utilized to drive graphene"s carriers on time scales much faster than that on which energy loss to the underlying substrate can occur, thereby allowing the observation of the highest saturation velocities reported to date. In a dramatic departure from the behavior exhibited by conventional metals and semiconductors, as the electron or hole density is reduced toward the charge-neutrality point, the drift velocity is found to reach values comparable to the Fermi velocity itself. Corresponding current densities are as large as 109 A/cm2, similar to the values reported for carbon nanotubes and for graphene-on-diamond transistors. In essence, our approach of rapid pulsing allows us to "free" graphene from the deleterious influence of its substrate, revealing a pathway to achieve the superior electrical performance promised by this material. The usefulness of this approach is not merely limited to graphene but should extend also to a broad variety of two-dimensional semiconductors.
Citation
Nano Letters, 16(1), 399-403, 2016
Subjects

graphene

hot carriers

thermal effects in na...

transient transport

Velocity saturation

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