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Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering
Author(s)
Nopparuchikun, Adison
Teakchaicum, Sakmongkon
Onsee, Peeradon
Duangrawa, Asanlaya
Sittimart, Phongsaphak
Date Issued
June 1, 2017
Type
Conference Paper
Abstract
Heterojunctions composed of n-type β-FeSi2 thin films and Ρ-type Si(111) substrates were formed by radio frequency magnetron sputtering at an Ar pressure of 2.66 x10-1 Pa at a substrate temperature of 560 °C. The current density-voltage (J-V) curves of the heterojunctions measured in the dark and under illumination at room temperature showed a large leakage current under reverse bias conditions and a weak response to nearinfrared (NIR) light irradiation. From the results of the analysis of dark forward J-V curves, the dominant carrier transport mechanisms at V : 0.15V and V > 0.15V were considered a recombination process and a space-charge-limited current process, respectively. Both capacitance-voltage and conductance-voltage characteristics at room temperature were measured and analyzed as a function of applied frequency ( f ) ranging from 20 kHz to 2MHz in order to estimate the series resistance (Rs) by the Nicollian-Brews method. Rs was estimated as 77.79Ω at 20 kHz. It decreased to 14.16Ω at 2 MHz, which is expected because the charges at the interface states cannot follow the AC signal at high f values.
Citation
Japanese Journal of Applied Physics, 56(6), 2017