Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure

Onlaor, Korakot; Thiwawong, Thutiyaporn; Tunhoo, Benchapol

doi:10.1016/j.jallcom.2017.10.197

Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure

Author(s)

Onlaor, Korakot

Thiwawong, Thutiyaporn

Tunhoo, Benchapol

Date Issued

January 25, 2018

Type

Article

DOI

10.1016/j.jallcom.2017.10.197

Abstract

Multilevel conductance switching was achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al. The current-voltage (I-V) curves of the memory devices at low reading voltages showed three distinguished states of current. The memory devices exhibited non-volatile rewritable memory characteristics. The carrier transport mechanisms of the devices in each state were analyzed by theoretical models based on the experimental I-V data. In addition, retention time measurements showed clearly three current states with good data retention properties. From the retention times test, the average values of ON/OFF, ON/intermediate (INTERM) and INTERM/OFF current ratios of the memory devices were 1.7 × 10⁶, 3.5 × 10² and 5.0 × 10³, respectively.

Citation

Journal of Alloys and Compounds, 732, 880-886, 2018

Subjects

Memory

Multilevel

Nanoparticles

PVK

Silver