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Effects of Annealing Process on the Electrical Properties of MEMS Capacitive Microphone
Author(s)
Jantawong, Jirawat
Leepattarapongpan, Chana
Chaowicharat, Ekalak
Jeamsaksiri, Wutthinan
Austin, Anu
Sooriakumar, Kathirgamasundaram
Niemcharoen, Surasak
Date Issued
July 2, 2018
Type
Conference Paper
Abstract
In this paper, the effects of annealing temperature after pre-bonding device wafer and cover wafer during wafer fusion bonding process on the electrical properties of MEMS-based capacitive microphone with 0.53 μm thick poly-Si membrane were investigated. By the annealing in N2 ambient (14 SLM) at 900°C for 30 min, the device exhibited capacitance of 2.0 pF with pull-in voltage of 12 V. The significantly improvement of electrical properties is related to the reducing of residual stress in poly-Si membrane to near-zero level by using suitable annealing condition.
Citation
Ieecon 2018 6th International Electrical Engineering Congress, 2018