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  4. Sub-30 ppm/oC high-frequency temperature-compensated CMOS relaxation oscillator
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Sub-30 ppm/oC high-frequency temperature-compensated CMOS relaxation oscillator

Author(s)
Sakphrom, Siraporn
Limpiti, Thunyawat
Wichaipanich, Noraset
Thanachayanont, Apinunt
Date Issued
July 2, 2018
Type
Conference Paper
DOI
10.1109/ECTICon.2018.8619891
Abstract
This paper describes the design and realization of a high-frequency temperature-compensated CMOS relaxation oscillator in a 0.35-µm CMOS technology. The proposed oscillator employs the current-controlled topology with a resistive source-degeneration transconductor and a current comparator in order to achieve high oscillation frequency and low power dissipation. Temperature compensation of the oscillation frequency is achieved by simulation results show that, at a nominal oscillation frequency of 32.48 MHz, the proposed oscillator exhibited a temperature coefficient of less than 28.41 ppm/oC over a temperature range of -40oC to +120oC, while consuming 241.5 µW from a 2.5-V single power supply voltage.
Citation
Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 305-308, 2018
Subjects

Current controlled os...

Relaxation oscillator...

Temperature compensat...

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