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Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode
Author(s)
Gaewdang, T.
Wongcharoen, Ng
Date Issued
July 4, 2018
Type
Conference Paper
Abstract
The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.253:Sb. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination model occurring at junction interface with Ea and E00 values about 1.565 eV and 99.5 meV, respectively.
Citation
Iop Conference Series Materials Science and Engineering, 383(1), 2018