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Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits
Author(s)
Date Issued
February 1, 2019
Type
Article
Abstract
This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm × 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range.
Citation
AEU International Journal of Electronics and Communications, 100, 32-38, 2019