Effect of Pt-doped on the photocurrent of MSM photodetector
| dc.contributor.author | N Sangwaranatee | |
| dc.contributor.author | I Srithanachai | |
| dc.contributor.author | S Niemcharoen | |
| dc.date.accessioned | 2025-07-21T06:05:11Z | |
| dc.date.issued | 2021-05-01 | |
| dc.description.abstract | Abstract This article report the fabrication and characteristics of MSM photo detector by compare between non-doped and doped platinum (Pt) atom. Fabrication process has same but different in Pt doping process for atom doping and diffusion process. The metal finger width 2um with 50 um spacing between metal contact. At bias voltage 10 voltage show higher capacitance-voltage and photocurrent increase after doped with Pt atom. By experiment shows photocurrent increase around 4 times from 45.98 to 197.22 uA at bias 10 voltage by photoluminescence 25,000 lux. | |
| dc.identifier.doi | 10.1088/1742-6596/1921/1/012104 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/10311 | |
| dc.subject | Photocurrent | |
| dc.subject | Biasing | |
| dc.subject | Photoconductivity | |
| dc.subject.classification | Gas Sensing Nanomaterials and Sensors | |
| dc.title | Effect of Pt-doped on the photocurrent of MSM photodetector | |
| dc.type | Article |