Impact of SRFE process on electrical properties of P-N photodetector
| dc.contributor.author | N. Sangwaranatee | |
| dc.contributor.author | Itsara Srithanachai | |
| dc.contributor.author | Surasak Niemcharoen | |
| dc.date.accessioned | 2026-05-08T19:21:50Z | |
| dc.date.issued | 2021-2-1 | |
| dc.description.abstract | Abstract Semiconductor properties change from soft radiation flash exposure process (SRFE) will present in this paper. Semiconductor device use with radiation application and always degrade because impact from radiation will damage on device structure. Currently, the defects from radiation cannot explain all of impact to electrical properties because has wind range in several application. However, this paper will present influent from Roentgen radiation on P-N photodetector device by expose for few second and low energy. The radiation will expose on device for many time to reach target time and will control distance between radiations machine and devices. Forward current of device after SRFE process has changed in positive way by build in potential (V bi ) decrease around 0.2V and forward current increase around 4 orders. | |
| dc.identifier.doi | 10.1088/1757-899x/1070/1/012009 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/18218 | |
| dc.publisher | IOP Conference Series Materials Science and Engineering | |
| dc.subject | Integrated Circuits and Semiconductor Failure Analysis | |
| dc.subject | Semiconductor materials and devices | |
| dc.subject | Advancements in Semiconductor Devices and Circuit Design | |
| dc.title | Impact of SRFE process on electrical properties of P-N photodetector | |
| dc.type | Article |