Impedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering

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dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorBoonchoat Paosawatyanyong
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorTsuyoshi Yoshitake
dc.contributor.authorNathaporn Promros
dc.date.accessioned2026-05-08T19:19:28Z
dc.date.issued2023-6-24
dc.identifier.doi10.1016/j.mssp.2023.107671
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/17013
dc.publisherMaterials Science in Semiconductor Processing
dc.subjectSemiconductor materials and interfaces
dc.subjectSurface and Thin Film Phenomena
dc.subjectIron-based superconductors research
dc.titleImpedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering
dc.typeArticle

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