Resistive Switching Behavior of Ti/ZnO/Mo Thin Film Structure for Nonvolatile Memory Applications

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dc.contributor.authorRachasak Sakdanuphab
dc.contributor.authorAparporn Sakulkalavek
dc.date.accessioned2025-07-21T05:56:07Z
dc.date.issued2015-08-01
dc.identifier.doi10.4028/www.scientific.net/kem.659.588
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5294
dc.subjectPulsed DC
dc.subjectCavity magnetron
dc.subject.classificationAdvanced Memory and Neural Computing
dc.titleResistive Switching Behavior of Ti/ZnO/Mo Thin Film Structure for Nonvolatile Memory Applications
dc.typeArticle

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