Characterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunction Photodiodes

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dc.contributor.authorNathaporn Promros
dc.contributor.authorKenji Hanada
dc.contributor.authorMotoki Takahara
dc.contributor.authorTakanori Hanada
dc.contributor.authorRyuji Baba
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorLi Chen
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:56:27Z
dc.date.issued2015-12-01
dc.identifier.doi10.4028/www.scientific.net/amr.1131.20
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5491
dc.subjectNanocrystalline material
dc.subjectPhotodiode
dc.subject.classificationSemiconductor materials and interfaces
dc.titleCharacterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunction Photodiodes
dc.typeArticle

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