Comparison of Conventional and LDD NMOSFETs Hot-Carrier Degradation in 0.8 _m CMOS Technology

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dc.contributor.authorN. Phongphanchantra
dc.contributor.authorA. Ruangphanit
dc.contributor.authorN. Klunngien
dc.contributor.authorW. Yamwong
dc.contributor.authorS. Niemcharoen
dc.date.accessioned2025-07-21T05:49:38Z
dc.date.issued2008-05-01
dc.identifier.doi10.1109/ecticon.2008.4600557
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1600
dc.subjectTransconductance
dc.subjectDegradation
dc.subject.classificationSemiconductor materials and devices
dc.titleComparison of Conventional and LDD NMOSFETs Hot-Carrier Degradation in 0.8 _m CMOS Technology
dc.typeArticle

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