0.3V Bulk-Driven Current Conveyor

Abstract

This paper presents the design and the experimental results of a sub 0.5 V bulk-driven (BD) current conveyor (CCII) using 0.18 μm TSMC CMOS technology with a total chip area of 0.0134 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . All transistors are biased in the subthreshold region for low-voltage low-power operation and the input transistors are controlled from their bulk terminals for rail-to-rail input voltage range. The circuit is designed to work with voltage supply (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> = 0.3V), which is much lower than the threshold voltage of the MOS transistor (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> =0.5V) while consuming 19 nW of power. The measurement results confirm the proper function of the proposed circuit.