Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi<sub>2</sub>/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

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dc.contributor.authorNathaporn Promros
dc.contributor.authorSuguru Funasaki
dc.contributor.authorMotoki Takahara
dc.contributor.authorRy_hei Iwasaki
dc.contributor.authorMahmoud Shaban
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:55:52Z
dc.date.issued2015-05-01
dc.identifier.doi10.4028/www.scientific.net/amr.1103.91
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5140
dc.subjectThermionic emission
dc.subjectEquivalent series resistance
dc.subjectNanocrystalline material
dc.subject.classificationSemiconductor materials and interfaces
dc.titleDiode Parameters of Mesa Structural n-Type Nanocrystalline FeSi<sub>2</sub>/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography
dc.typeArticle

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