High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density

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dc.contributor.authorA. Poyai
dc.contributor.authorW. Bunjongpru
dc.contributor.authorN. Klunngien
dc.contributor.authorS. Porntheerapat
dc.contributor.authorC. Hruanan
dc.contributor.authorS. Sopitpan
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:49:57Z
dc.date.issued2008-09-11
dc.identifier.doi10.1016/j.mssp.2008.07.012
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1769
dc.subjectAuger electron spectroscopy
dc.subjectHigh-_ dielectric
dc.subject.classificationSemiconductor materials and devices
dc.titleHigh-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density
dc.typeArticle

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