A Pure CMOS Stack Electrostatic Micromirror Featuring Simplified Fabrication and Stress-Adjusted Modeling

dc.contributor.authorWenhao Chen
dc.contributor.authorHadi Tavakkoli
dc.contributor.authorBin Zhao
dc.contributor.authorMaojie Zhang
dc.contributor.authorWibool Piyawattanametha
dc.contributor.authorYi-Kuen Lee
dc.date.accessioned2026-05-08T19:24:43Z
dc.date.issued2025-1-19
dc.description.abstractWe report a pure CMOS stack-made comb-actuated electrostatic micromirror for non-resonant scanning using a standard 0.18 μm 1-polysilicon 6-metal CMOS foundry process without complex post-processing steps. The staggered vertical combs are formed by different metal layers to provide a nonlinear electrostatic torque, enabling the device to achieve a 12.4° optical scan angle under 70V with a mirror size of 0.4×0.4 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Considering CMOS process-induced stress, a modified theoretical model of the comb actuators agrees with experimental data, which gives a guideline for the design optimization of non-resonant CMOS-MEMS mirrors. This innovative integration of comb-drive actuator and mirror structure within the limited thickness of the standard CMOS stack (11 μm) and improved manufacturability boost a new generation of compact, high-performance optical MEMS devices.
dc.identifier.doi10.1109/mems61431.2025.10917994
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/19703
dc.subjectAdvanced MEMS and NEMS Technologies
dc.subjectAdvanced Sensor and Energy Harvesting Materials
dc.subjectAdvancements in Semiconductor Devices and Circuit Design
dc.titleA Pure CMOS Stack Electrostatic Micromirror Featuring Simplified Fabrication and Stress-Adjusted Modeling
dc.typeArticle

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