Characterizations of Mesa Structural Near-Infrared n-Type Nanocrystalline-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes at Low Temperatures

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dc.contributor.authorNathaporn Promros
dc.contributor.authorRy_hei Iwasaki
dc.contributor.authorSuguru Funasaki
dc.contributor.authorKyohei Yamashita
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:54:01Z
dc.date.issued2013-08-01
dc.identifier.doi10.4028/www.scientific.net/amr.747.217
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4092
dc.subjectPhotocurrent
dc.subjectPhotodiode
dc.subjectNanocrystalline material
dc.subject.classificationSemiconductor materials and interfaces
dc.titleCharacterizations of Mesa Structural Near-Infrared n-Type Nanocrystalline-FeSi<sub>2</sub>/p-Type Si Heterojunction Photodiodes at Low Temperatures
dc.typeArticle

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