Temperature and devices dimension dependence on threshold voltage, the low field mobilty and the series parasitic resistance of PMOSFET

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dc.contributor.authorN. Sakuna
dc.contributor.authorR. Muanghlua
dc.contributor.authorS. Niemcharoen
dc.contributor.authorA. Ruangphanit
dc.contributor.authorA. Poyai
dc.date.accessioned2025-07-21T05:53:51Z
dc.date.issued2013-05-01
dc.identifier.doi10.1109/ecticon.2013.6559490
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3995
dc.subjectTransconductance
dc.subjectEquivalent series resistance
dc.subjectParasitic element
dc.subjectNegative-bias temperature instability
dc.subjectChannel length modulation
dc.subject.classificationAdvancements in Semiconductor Devices and Circuit Design
dc.titleTemperature and devices dimension dependence on threshold voltage, the low field mobilty and the series parasitic resistance of PMOSFET
dc.typeArticle

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