Power device impact using pt-doped on i-v characteristics

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dc.contributor.authorSangwaranatee, Narong
dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorYupapin, Preecha P.
dc.date.accessioned2026-08-06T10:13:53Z
dc.date.available2026-08-06T10:13:53Z
dc.date.issued2016-06-01
dc.description.abstractWe investigate the influence of Pt-doped in the power device, where the power device has been fabricated by using CMOS technology. Pt has high diffusion coefficient in the semiconductor material and Pt atom that can be used to reduce the device switching time. On the other hand, it may induce defects in device mechanism. The results obtained show that the Pt can penetrate into the silicon structure of 3,700A (before RTA process) by using the ion implantation 120keV. The Pt-doped device has shown the higher forward current of order 1. The goal of this experiment is to investigate the effect of Pt-doping on electrical characteristics of the power device.
dc.identifier.citationFar East Journal of Electronics and Communications, 16(2), 451-458, 2016
dc.identifier.doi10.17654/EC016020451
dc.identifier.issn09737006
dc.identifier.other2-s2.0-84969781326
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6892
dc.sourceFar East Journal of Electronics and Communications
dc.subjectElectronics
dc.subjectI-V characteristics
dc.subjectPt-doped
dc.subjectRTA process
dc.subjectSemiconductor
dc.titlePower device impact using pt-doped on i-v characteristics
dc.typeArticle

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