Light Detection and Carrier Transportation Mechanism in <i>p</i>-Type Si/<i>n</i>-Type Nanocrystalline FeSi<sub>2</sub> Heterojunctions Produced via Radio-Frequency Magnetron Sputtering

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dc.contributor.authorPattarapol Sittisart
dc.contributor.authorNathaporn Promros
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorY_ki Tanaka
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:03:12Z
dc.date.issued2020-03-03
dc.identifier.doi10.1166/jnn.2020.17842
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9266
dc.subjectNanocrystalline material
dc.subjectPhotocurrent
dc.subjectCavity magnetron
dc.subjectLeakage (economics)
dc.subjectBiasing
dc.subject.classificationSemiconductor materials and interfaces
dc.titleLight Detection and Carrier Transportation Mechanism in <i>p</i>-Type Si/<i>n</i>-Type Nanocrystalline FeSi<sub>2</sub> Heterojunctions Produced via Radio-Frequency Magnetron Sputtering
dc.typeArticle

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