Thermally induced phase transition and dielectric relaxation in lead-free BaTi0.94Sn0.06O3 Ceramics: Insights from in-situ XRD and XAS

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dc.contributor.authorSukkha, Usa
dc.contributor.authorChanlek, Narong
dc.contributor.authorKidkhunthod, Pinit
dc.contributor.authorKolodiazhnyi, Taras
dc.contributor.authorVittayakorn, Wanwilai
dc.contributor.authorVittayakorn, Naratip
dc.date.accessioned2026-08-06T10:52:37Z
dc.date.available2026-08-06T10:52:37Z
dc.date.issued2025-11-01
dc.description.abstractLead-free BaTi<inf>0.94</inf>Sn<inf>0.06</inf>O<inf>3</inf> (BTS) ceramics were synthesized using the conventional solid-state reaction method to investigate thermally induced phase transitions and dielectric relaxation phenomena. A combination of in-situ X-ray Diffraction (XRD) and in-situ Synchrotron X-ray Absorption Spectroscopy (XAS) was employed to examine phase transitions across the temperature range of 200–400 K. The results reveal sequential phase transitions: rhombohedral-orthorhombic (R + O) at 200 K, orthorhombic (O) at 250–300 K, tetragonal (T) at 325–359 K, and tetragonal-cubic (T + C) at 373–400 K. Dielectric measurements highlight an anomalous relaxation behavior at 70–160 K, attributed to domain wall freezing. This phenomenon follows Vogel-Fulcher behavior, with an activation energy of 14 meV, a freezing temperature of 82 K, and an attempt frequency of 4.7 × 10<sup>6</sup> Hz. X-ray Photoelectron Spectroscopy (XPS) analysis reveals oxygen deficiency on the surface of the BTS ceramic, resulting in the coexistence of Ti<sup>3+</sup>/Ti<sup>4+</sup> and Sn<sup>2+</sup>/Sn<sup>4+</sup> oxidation states. These defects significantly influence the dielectric and phase transition properties. This study provides comprehensive insights into the interplay between local structural changes and phase transition mechanisms in BTS ceramics. By employing a multi-technique approach, it advances the understanding of dielectric and ferroelectric behaviors, positioning BTS ceramics as promising candidates for lead-free dielectric and ferroelectric device applications.
dc.identifier.citationRadiation Physics and Chemistry, 236, 2025
dc.identifier.doi10.1016/j.radphyschem.2025.112988
dc.identifier.issn0969806X
dc.identifier.other2-s2.0-105006648511
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/17349
dc.sourceRadiation Physics and Chemistry
dc.subjectBaTiO3
dc.subjectDielectric
dc.subjectFerroelectric
dc.subjectLocal structure
dc.subjectPhase transition
dc.titleThermally induced phase transition and dielectric relaxation in lead-free BaTi0.94Sn0.06O3 Ceramics: Insights from in-situ XRD and XAS
dc.typeArticle

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