Diode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type _-FeSi<sub>2</sub> Thin Films

Simple item page
dc.contributor.authorNathaporn Promros
dc.contributor.authorSuguru Funasaki
dc.contributor.authorMotoki Takahara
dc.contributor.authorMahmoud Shaban
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:55:14Z
dc.date.issued2014-10-01
dc.identifier.doi10.4028/www.scientific.net/amr.1043.57
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4783
dc.subjectThermionic emission
dc.subjectSaturation current
dc.subjectEquivalent series resistance
dc.subjectSaturation (graph theory)
dc.subject.classificationSemiconductor materials and interfaces
dc.titleDiode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type _-FeSi<sub>2</sub> Thin Films
dc.typeArticle

Files

Collections

All