Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

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dc.contributor.authorKeerati Maneesai
dc.contributor.authorKanyapak Silakaew
dc.contributor.authorSunisar Khammahong
dc.contributor.authorChaiwat Phrompet
dc.contributor.authorChaval Sriwong
dc.contributor.authorChanchana Thanachayanont
dc.contributor.authorChesta Ruttanapun
dc.date.accessioned2025-07-21T06:08:50Z
dc.date.issued2023-03-01
dc.description.abstractThe temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk-reduced graphene oxide (rGO) prepared by a chemical reduction process were investigated in a temperature range of 310–475 K. The bulk rGO contained bipolar charge carriers with p-type to n-type switching at a temperature of 420 K. The materials illustrated a p-type characteristic in the temperature range of 310–420 K and n-type characteristic in the temperature range of 420–475 K. The charge transport mechanism was that of the graphene-derived 2D material in the p-type regime and governed by polaronic charge carriers.
dc.identifier.doi10.1063/5.0142476
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12268
dc.subjectCharge carrier
dc.subjectAtmospheric temperature range
dc.subjectElectron Mobility
dc.subject.classificationGraphene research and applications
dc.titleTemperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials
dc.typeArticle

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