Use of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications

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dc.contributor.authorThongchai Thongvigitmanee
dc.contributor.authorWisut Titiroongruang
dc.contributor.authorArckom Srihapat
dc.contributor.authorAmporn Poyai
dc.date.accessioned2025-07-21T05:52:06Z
dc.date.issued2011-05-01
dc.identifier.doi10.1109/asmc.2011.5898186
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2998
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleUse of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications
dc.typeArticle

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