New method for improving the electrical characteristics of P-N junction diode

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dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorUeamanapong, Surada
dc.contributor.authorPoyai, Amporn
dc.contributor.authorNiemcharoen, Surasak
dc.date.accessioned2026-08-06T10:03:59Z
dc.date.available2026-08-06T10:03:59Z
dc.date.issued2012-01-01
dc.description.abstractThis paper investigates the effect of soft X-ray irradiation various energy and times on PN junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.
dc.identifier.citationAdvanced Materials Research, 378-379, 606-609, 2012
dc.identifier.doi10.4028/www.scientific.net/AMR.378-379.606s
dc.identifier.issn10226680
dc.identifier.other2-s2.0-80955125836
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4119
dc.sourceAdvanced Materials Research
dc.subjectSeries resistance
dc.subjectSilicon bulk
dc.subjectSoft X-ray annealing
dc.titleNew method for improving the electrical characteristics of P-N junction diode
dc.typeConference Paper

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