Diode Parameters of Heterojunctions Comprising <i>p</i>-Type Ultrananocrystalline Diamond Films and <i>n</i>-Type Si Substrates

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorTakanori Hanada
dc.contributor.authorShinya Ohmagari
dc.contributor.authorAbdelrahman Zkria
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:00:49Z
dc.date.issued2018-11-22
dc.identifier.doi10.1166/jnn.2019.16232
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7927
dc.subjectThermionic emission
dc.subjectEquivalent series resistance
dc.subjectPulsed Laser Deposition
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titleDiode Parameters of Heterojunctions Comprising <i>p</i>-Type Ultrananocrystalline Diamond Films and <i>n</i>-Type Si Substrates
dc.typeArticle

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