Structure and Piezoelectric Properties of Aluminum Nitride Thin Films on Quartz Substrates Deposited by Reactive RF-Magnetron Sputtering

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dc.contributor.authorAmorn Thedsakhulwong
dc.contributor.authorKitsakorn Locharoenrat
dc.contributor.authorWarawoot Thowladda
dc.date.accessioned2025-07-21T05:53:51Z
dc.date.issued2013-05-01
dc.identifier.doi10.4028/www.scientific.net/amr.699.308
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3993
dc.subjectTexture (cosmology)
dc.subject.classificationGaN-based semiconductor devices and materials
dc.titleStructure and Piezoelectric Properties of Aluminum Nitride Thin Films on Quartz Substrates Deposited by Reactive RF-Magnetron Sputtering
dc.typeArticle

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