CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

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dc.contributor.authorRatchanok Somphonsane
dc.contributor.authorTinna Chiawchan
dc.contributor.authorWaraporn Bootsa-ard
dc.contributor.authorHarihara Ramamoorthy
dc.date.accessioned2026-05-08T19:14:50Z
dc.date.issued2023-7-4
dc.description.abstract, thereby facilitating its application in semiconductors and related industries.
dc.identifier.doi10.3390/ma16134817
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/14740
dc.publisherMaterials
dc.subject2D Materials and Applications
dc.subjectMXene and MAX Phase Materials
dc.subjectFerroelectric and Negative Capacitance Devices
dc.titleCVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions
dc.typeArticle

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