Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures

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dc.contributor.authorKorakot Onlaor
dc.contributor.authorNatpasit Chaithanatkun
dc.contributor.authorBenchapol Tunhoo
dc.date.accessioned2025-07-21T05:57:09Z
dc.date.issued2016-08-03
dc.identifier.doi10.1016/j.cap.2016.07.017
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5888
dc.subjectIndium tin oxide
dc.subject.classificationZnO doping and properties
dc.titleElectrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures
dc.typeArticle

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