Optimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen

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dc.contributor.authorTorasa, Chonmapat
dc.contributor.authorSrithanachai, Itsara
dc.date.accessioned2026-08-06T10:35:33Z
dc.date.available2026-08-06T10:35:33Z
dc.date.issued2022-01-01
dc.description.abstractThis paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300 °C. Transparent of thin films after prepared at thickness around 1,166 µm and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170 nm and low resistivity 2.1 × 10<sup>−5</sup> ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413 nm with 87.6% transparent and 0.8 × 10<sup>−3</sup> ohm-cm resistivity.
dc.identifier.citationMaterials Today Proceedings, 65, 2439-2441, 2022
dc.identifier.doi10.1016/j.matpr.2022.06.073
dc.identifier.issn22147853
dc.identifier.other2-s2.0-85132883484
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12824
dc.sourceMaterials Today Proceedings
dc.subjectIndium Tin Oxide (ITO)
dc.subjectRF sputtering
dc.subjectThin films
dc.subjectTransparent electrode
dc.titleOptimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen
dc.typeConference Paper

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