Effects of Annealing Process on the Electrical Properties of MEMS Capacitive Microphone

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dc.contributor.authorJantawong, Jirawat
dc.contributor.authorLeepattarapongpan, Chana
dc.contributor.authorChaowicharat, Ekalak
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorAustin, Anu
dc.contributor.authorSooriakumar, Kathirgamasundaram
dc.contributor.authorNiemcharoen, Surasak
dc.date.accessioned2026-08-06T10:20:18Z
dc.date.available2026-08-06T10:20:18Z
dc.date.issued2018-07-02
dc.description.abstractIn this paper, the effects of annealing temperature after pre-bonding device wafer and cover wafer during wafer fusion bonding process on the electrical properties of MEMS-based capacitive microphone with 0.53 μm thick poly-Si membrane were investigated. By the annealing in N2 ambient (14 SLM) at 900°C for 30 min, the device exhibited capacitance of 2.0 pF with pull-in voltage of 12 V. The significantly improvement of electrical properties is related to the reducing of residual stress in poly-Si membrane to near-zero level by using suitable annealing condition.
dc.identifier.citationIeecon 2018 6th International Electrical Engineering Congress, 2018
dc.identifier.doi10.1109/IEECON.2018.8712180
dc.identifier.other2-s2.0-85066631619
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8681
dc.sourceIeecon 2018 6th International Electrical Engineering Congress
dc.subjectAnnealing
dc.subjectC-V characteristics
dc.subjectMEMS capacitive microphone
dc.subjectPolysilicon membrane
dc.subjectPull-in voltage
dc.subjectResidue stress
dc.titleEffects of Annealing Process on the Electrical Properties of MEMS Capacitive Microphone
dc.typeConference Paper

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