The Study of Fabricated N-Type Diamond for Hall Sensor by Hot Filament Chemical Vapor Deposition (HFCVD) Method

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dc.contributor.authorChanthep, Prasert
dc.contributor.authorPanyalert, Wasin
dc.contributor.authorSiriwongrungson, Vilailuck
dc.contributor.authorAtiwongsangthong, Narin
dc.contributor.authorTitiroongraung, Wisut
dc.date.accessioned2026-08-06T10:14:59Z
dc.date.available2026-08-06T10:14:59Z
dc.date.issued2017-01-01
dc.description.abstractIn this research, the study of fabricated n-type diamond for Hall sensor by hot filament chemical vapor deposition (HFCVD) method is presented. The fabricated n-type diamond film doped with phosphorus in ethanol (C2H5OH) at P/C ratio of 10,000 ppm was synthesis on silicon substrate at 750 °C for 12 hours. Its morphology, crystallinity and types of carbon were analyzed using optical microscope and Raman spectroscope. The structure of n-type diamond for Hall Sensor comprises of four silver paste electrodes on the surface of the fabricated n-type diamond film. An electrical property of electrode, Ohmic, was tested on the fabricated silver paste electrodes. The impact of temperature on the fabricated n-type diamond for Hall sensor was evaluated. The operating temperature as high as 240 °C was observed. Magnetic response characteristic of the fabricated n-type diamond was measured. The absolute sensitivity of 9 µV/Gauss was observed. Properties of the fabricated n-type diamond for Hall sensor under operation were measured. The electrical density is 1.82 x 10<sup>15</sup> cm<sup>-3</sup>, electrical resistance is 5.443 ?·cm and electrical mobility is 630 cm<sup>2</sup>/v-sec.
dc.identifier.citationLecture Notes in Engineering and Computer Science, 2228, 741-744, 2017
dc.identifier.issn20780958
dc.identifier.other2-s2.0-85041186257
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7197
dc.sourceLecture Notes in Engineering and Computer Science
dc.subjectHall sensor
dc.subjectHFCVD
dc.subjectN-type diamond
dc.titleThe Study of Fabricated N-Type Diamond for Hall Sensor by Hot Filament Chemical Vapor Deposition (HFCVD) Method
dc.typeConference Paper

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