Formation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation

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dc.contributor.authorW. Phae-ngam
dc.contributor.authorJ. Prathumsit
dc.contributor.authorC. Chananonnawathorn
dc.contributor.authorH. Nakajima
dc.contributor.authorT. Lertvanithphol
dc.contributor.authorT. Pogfay
dc.contributor.authorN. Limsuwan
dc.contributor.authorD. Phokharatkul
dc.contributor.authorA. Vora-ud
dc.contributor.authorN. Triamnak
dc.contributor.authorA. Mungchamnankit
dc.contributor.authorM. Horprathum
dc.contributor.authorP. Limsuwan
dc.date.accessioned2025-07-21T06:07:44Z
dc.date.issued2022-10-01
dc.identifier.doi10.1016/j.vacuum.2022.111563
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/11697
dc.subjectNanorod
dc.subject.classificationSemiconductor materials and devices
dc.titleFormation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation
dc.typeArticle

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