Effective properties of undoped and Indium 3+ -doped tin manganese telluride (Sn 1_x Mn x Te) nanoparticles via using a chemical bath deposition route

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dc.contributor.authorPatsorn Boon-on
dc.contributor.authorAuttasit Tubtimtae
dc.contributor.authorVeeramol Vailikhit
dc.contributor.authorPichanan Teesetsopon
dc.contributor.authorSupab Choopun
dc.date.accessioned2025-07-21T05:58:02Z
dc.date.issued2017-03-24
dc.identifier.doi10.1016/j.physleta.2017.03.019
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6391
dc.subjectChemical bath deposition
dc.subjectNiobium pentoxide
dc.subject.classificationChalcogenide Semiconductor Thin Films
dc.titleEffective properties of undoped and Indium 3+ -doped tin manganese telluride (Sn 1_x Mn x Te) nanoparticles via using a chemical bath deposition route
dc.typeArticle

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