Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method
| dc.contributor.author | Ueamanapong, Surada | |
| dc.contributor.author | Srithanachai, Itsara | |
| dc.contributor.author | Niemcharoen, Surasak | |
| dc.contributor.author | Poyai, Amporn | |
| dc.date.accessioned | 2026-08-06T10:08:47Z | |
| dc.date.available | 2026-08-06T10:08:47Z | |
| dc.date.issued | 2014-01-01 | |
| dc.description.abstract | This paper describes a transient phenomenon in the reverse current of P-N junctions giving rise to a hump at a specific reverse bias. P-N diode as been fabricated by a deep boron ion implantation (120 keV) and a junction depth around 4 μm is expected. Ion implantation can cause defect in silicon substrate even if the device was cured by annealing process, the defect or its effect is still remained. I-V characteristic has been acquired from -10 V to 0 V in temperature variation of 30-80°C. At the specific condition of -3 V, 80°C humps occurred on the curve and when the device was exposed to X-ray at energy of 40, 55 and 70 keV. The humps were then shifted toward 0 V. Activation energy has been calculated in order to give an insight into the device characteristics. It revealed the presence of a non-uniform density of electron traps corresponding to a broad range of energy levels from about 0.65-0.67 eV above the intrinsic band. This report shows an interesting phenomenon of the deep P-N junction diode modified by X-ray irradiation. Copyright © 2014 Inderscience Enterprises Ltd. | |
| dc.identifier.citation | International Journal of Materials and Product Technology, 49(1), 72-80, 2014 | |
| dc.identifier.doi | 10.1504/IJMPT.2014.062948 | |
| dc.identifier.issn | 02681900 | |
| dc.identifier.other | 2-s2.0-84903650105 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/5482 | |
| dc.source | International Journal of Materials and Product Technology | |
| dc.subject | High energy ion implantation | |
| dc.subject | Soft X-ray annealing method | |
| dc.subject | Transient hump | |
| dc.title | Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method | |
| dc.type | Conference Paper |